GaN 衬底
GaN衬底的特长
弊司于2011年开始经销Ammono公司的GaN衬底。该公司的单晶GaN衬底是采用AMMONOTHERMAL法制作的世界最高级别的高品质衬底。其中，显著的地方就是与其他工艺相比位错密度（～x10e4）相差近两位数。凭借高载体浓度，不仅在激光Diode领域，也被期待在功率器件（HEMT晶体管、Diode等）领域得到应用。尺寸由10mm□、1～2英寸、面方位C面、非极性面、半极性面等，可根据需求对应。
GaN半导体被期待用于很多用途，今后的普及备受期待。
产品厂家介绍
Ammono公司（波兰）
欧洲No.1的GaN独立衬底厂家。该公司生产的GaN衬底被誉为世界最高品质。
1999年以波兰University of Warsaw的1992年GaN单晶研究开发项目为基础成立的GaN衬底专门厂家。
使用案例
1.显示器(Laser电视,投影机)
2.照明(白LED,UV LED)
3.节能装置(高效率,高耐圧,高温动作装置)
4.记忆装置(蓝色激光二极管)
5.无线电系统(高频装置)
规格
High-carrier-concentration n-type GaN substrates
| Features | Units | ORIENTATION | ||
|---|---|---|---|---|
| c-plane | m-plane | 20-21-plane | ||
| Carrier concentration | cm-3 | ～10-19 | ||
| Resistivity | Ω・cm | 10-3ー10-3 | ||
| Mobility | cm2/V・s | ～10-19 | ||
| Thickness | μm | On demand < 1mm | ||
| Total thickness variation(TTV) | μm | < 40 | ～ 20 | ～ 20 |
| Bow | μm | ≦ 10 | ||
| FWHM of X-ray rocking curve,(epi-ready surface at 100 μm × 100μm slit) | arcsec | ～ 20 | ～ 30 | ～ 20 |
| Dislocation density | cm-2 | ～5・104 | ||
| Misorientation | deg | On demand | ||
| Surface finishing | As cut / ground Roughly polished Optically polished (RMS ≦ 3nm) Epi-ready (RMS ≦ 0.5nm) |
|||
| Available sizes | 10 × 10mm 1N |
9 × 13mm 13 × 15mm |
10 × 10mm 13 × 15mm |
|
| Packaging | Separate single wafer container | |||
| Special Order Option | Please, contact Sales Department | |||
High Transparency n-type Gan Substrates Other semi-polar orientation available on request
| Features | Units | ORIENTATION | ||
|---|---|---|---|---|
| c-plane | ||||
| Carrier concentration | cm-3 | ～3・10-17 | ||
| Resistivity | Ω・cm | < 0.5 | ||
| Mobility | cm2/V・s | ～250 | ||
| Thickness | μm | ≥300 | ||
| Total thickness variation(TTV) | μm | ～20 | ||
| Bow | μm | ≤10 | ||
| FWHM of X-ray rocking curve,(epi-ready surface at 100 μm × 100μm slit) | arcsec | ～20 | ||
| Dislocation density | cm-2 | ～5・104 | ||
| Misorientation | deg | On demand | ||
| Surface finishing | As cut / ground Roughly polished Optically polished (RMS < 3nm) Epi-ready (RMS < 0.5nm) |
|||
| Available sizes | 10 × 10mm2, 1N | |||
| Packaging | Separate single wafer container | |||
| Special Order Option | Please, contact Sales Department | |||
Ultra High Resistivity Semi-Insulating GaN substrates
| Features | Units | ORIENTATION | ||
|---|---|---|---|---|
| c-plane | ||||
| Carrier concentration | cm-3 | - | ||
| Resistivity | Ω・cm | 109-1012 | ||
| Mobility | cm2/V・s | - | ||
| Thickness | μm | ≥300 | ||
| Total thickness variation(TTV) | μm | <40 | ||
| Bow | μm | ≤10 | ||
| FWHM of X-ray rocking curve,(epi-ready surface at 100 μm × 100μm slit) | arcsec | ～20 | ||
| Dislocation density | cm-2 | ～5・104 | ||
| Misorientation | deg | On demand | ||
| Surface finishing | As cut / ground Roughly polished Optically polished (RMS < 3nm) Epi-ready (RMS < 0.5nm) |
|||
| Available sizes | 10 × 10mm2, 1.5N | |||
| Packaging | Separate single wafer container | |||
| Special Order Option | Please, contact Sales Department | |||
